Infineon Technologies - IGA03N120H2XKSA1

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IGA03N120H2XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGA03N120H2XKSA1
Description N-Channel; Nominal Turn On Time (ton): 14.4 ns; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 3.9 V;
Datasheet IGA03N120H2XKSA1 Datasheet
In Stock31
NAME DESCRIPTION
Other Names: IFEINFIGA03N120H2XKSA1
SP000215371
IGA03N120H2-ND
2156-IGA03N120H2XKSA1
IGA03N120H2
Nominal Turn Off Time (toff): 310 ns
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 14.4 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 3.9 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
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