STGD20N45LZAG by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGD20N45LZAG
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; JEDEC-95 Code: TO-252AA;
Datasheet	STGD20N45LZAG Datasheet
In Stock	3,575

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	25 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage:	2.1 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	14500 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	4560 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	475 V
Maximum Gate-Emitter Voltage:	16 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,575	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

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