STMicroelectronics - STGY50NC60WD

FF100R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor operates at up to 175°C and features a built-in diode in its RECTANGULAR package style.

IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.

NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.

APTGT75A60T1G by Microchip Technology is an N-CHANNEL IGBT transistor with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and is ideal for MOTOR CONTROL applications. With a Max Collector Current of 100A and Max Power Dissipation of 250W, it offers efficient performance in RECTANGULAR package style.

BSM50GP120 by Infineon: N-CHANNEL IGBT with VCEsat of 2.55V, IC of 80A, and Pmax of 360W. Ideal for power electronics applications requiring high voltage (1200V) and current handling capabilities in complex configurations.

Insulated Gate Bipolar Transistors;

FGPF10N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 20A max collector current, and 42W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;

IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.

FF300R12KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, current of 440A, and turn-off time of 830ns. Ideal for POWER CONTROL applications due to its SILICON material and operating temperature up to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; No. of Terminals: 3;

Infineon Technologies' IGP40N65F5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment, renewable energy systems, and motor drives.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn Off Time (toff): 190 ns; Terminal Position: SINGLE;

Infineon Technologies' FP15R12KE3GBOSA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 25A. It has a toff of 610ns and ton of 135ns, suitable for high-power applications like motor drives and inverters due to its complex configuration and isolated case connection.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;

IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.

IGW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The transistor's package style is flange mount with through-hole terminals, suitable for high-power applications in industrial settings.

IRGB20B60PD1PBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 215W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast rise time of 8ns. Suitable for use in high-power systems requiring efficient switching capabilities.