SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGE200NB60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

1

4600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

170 ns

IXXX200N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

480 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

135 ns

IXXX160N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

940 W

310 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

93 ns

AUIRG4PH50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

57 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

638 ns

2170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG4BC40WLPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

294 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-262

e3

48 ns

HGTD1N120BNS9A

Onsemi

N-CHANNEL

SINGLE

YES

60 W

5.3 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

2.9 V

GULL WING

RECTANGULAR

1

370 ns

333 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

32 ns

-55 Cel

20 V

458 ns

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

24 ns

IXXX300N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

550 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

137 ns

HGT1S10N120BNST

Onsemi

N-CHANNEL

SINGLE

YES

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

GULL WING

RECTANGULAR

1

200 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

32 ns

IXXX300N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

510 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

278 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

128 ns

IRG4PC50FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

190 ns

620 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

52 ns

IXXX200N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

340 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

143 ns

FGD5T120SH

Onsemi

N-CHANNEL

SINGLE

YES

69 W

10 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

3.6 V

GULL WING

RECTANGULAR

1

159.6 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

25 V

4.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

245

44.8 ns

IXXX200N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

380 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

140 ns

IRGPS40B120UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

115 ns

SGD02N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

354 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

34 ns

SGW20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

66 ns

SGB02N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

IXGA20N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

e3

10

260

66 ns

SGP07N120XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

16.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

56 ns

IXLF19N250A

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

19 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

8 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

150 ns

UL RECOGNIZED

HGTP10N120BN

Onsemi

N-CHANNEL

SINGLE

NO

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

330 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

32 ns

IRG4BC30WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IXGA20N120A3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

66 ns

IXYH30N450HV

Littelfuse

N-CHANNEL

SINGLE

NO

430 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

FLANGE MOUNT

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

632 ns

IGW50N60TPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

TO-247AC

e3

60 ns

IGW25N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

397 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

61 ns

IGB50N65S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

215 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

51 ns

IGB50N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

396 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

60 ns

IRG4PC50SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

600 ns

1700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

62 ns

IXYF40N450

Littelfuse

N-CHANNEL

SINGLE

NO

290 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1128 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

786 ns

IRG4PC30KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

54 ns

IRG4BC40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

STGY50NC60WD

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

IRG4BC30KDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGH72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

540 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

61 ns

HGT1S10N120BNS

Onsemi

N-CHANNEL

SINGLE

YES

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

GULL WING

RECTANGULAR

1

200 ns

330 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

32 ns

IXDN75N120

Littelfuse

N-CHANNEL

SINGLE

NO

660 W

150 A

UNSPECIFIED

MOTOR CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

700 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

150 ns

UL RECOGNIZED

IRG4BC20WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 W

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

96 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4PC50WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

86 ns

177 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

266 ns

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

79 ns

IRG4PH30KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

53 ns

IRG4PH50SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

57 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2170 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

e3

62 ns

IXGH32N170A

Littelfuse

N-CHANNEL

SINGLE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

107 ns

IGP50N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

e3

60 ns

IGW15N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

IRG4PC30FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

36 ns

IGW50N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-247AC

e3

60 ns

IXYN100N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

152 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

265 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUFM-X4

ISOLATED

AVALANCHE RATED

122 ns

UL RECOGNIZED

SGD02N120BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

TO-252AA

40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.