HGTP10N120BN by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	HGTP10N120BN
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Transistor Element Material: SILICON;
Datasheet	HGTP10N120BN Datasheet
In Stock	7,123

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	35 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	15 ns
Transistor Application:	MOTOR CONTROL
Maximum Turn On Time (ton):	40 ns
Surface Mount:	NO
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	330 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	298 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	32 ns
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	450 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	200 ns
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	4.2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
7,123	-	-

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