Onsemi - FGH40T120SMD-F155

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FGH40T120SMD-F155 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH40T120SMD-F155
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Threshold Voltage: 7.5 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet FGH40T120SMD-F155 Datasheet
In Stock586
NAME DESCRIPTION
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 555 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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