MMIX4B22N300 by IXYS Corporation | Transistors

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Manufacturer	IXYS Corporation
Manufacturer's Part Number	MMIX4B22N300
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 38 A; Nominal Turn On Time (ton): 743 ns;
Datasheet	MMIX4B22N300 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	38 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	1870 ns
No. of Terminals:	9
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	DUAL
Nominal Turn On Time (ton):	743 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G9
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Other Names:	Q12641727D1
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	3000 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.7 V

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