FP35R12KT4B15BOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FP35R12KT4B15BOSA1
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; JESD-30 Code: R-XUFM-X24; Case Connection: ISOLATED;
Datasheet	FP35R12KT4B15BOSA1 Datasheet
In Stock	151

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	620 ns
No. of Terminals:	24
Maximum Power Dissipation (Abs):	210 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	210 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X24
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Other Names:	SP000408732 FP35R12KT4_B15-ND 2156-FP35R12KT4B15BOSA1 FP35R12KT4_B15
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.15 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
151	-	-

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