BSM150GT120DN2 by Siemens | Transistors

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Manufacturer	Siemens
Manufacturer's Part Number	BSM150GT120DN2
Description	N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Turn Off Time (toff): 900 ns;
Datasheet	BSM150GT120DN2 Datasheet
In Stock	859

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	200 A
Configuration:	3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	200 ns
Maximum Turn On Time (ton):	400 ns
Surface Mount:	NO
Nominal Turn Off Time (toff):	600 ns
No. of Terminals:	39
Terminal Position:	UPPER
Nominal Turn On Time (ton):	200 ns
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	900 ns
JESD-30 Code:	R-XUFM-X39
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	7500 W
Maximum Fall Time (tf):	100 ns
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
859	-	-

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