IKQ75N120CH3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IKQ75N120CH3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 938 W; Maximum Collector Current (IC): 150 A; Nominal Turn On Time (ton): 81 ns;
Datasheet	IKQ75N120CH3 Datasheet
In Stock	1,504

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	150 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Terminal Finish:	TIN
Nominal Turn Off Time (toff):	454 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	938 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	81 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.35 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,504	-	-

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