STMicroelectronics - STGW25H120F2

STGW25H120F2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGW25H120F2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 41 ns;
Datasheet STGW25H120F2 Datasheet
In Stock27,048
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 339 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 41 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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