Onsemi - NGTB15N120IHRWG

  1. Home
  2. Onsemi - NGTB15N120IHRWG
NGTB15N120IHRWG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGTB15N120IHRWG
Description Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
Datasheet NGTB15N120IHRWG Datasheet
In Stock9,827
NAME DESCRIPTION
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
9,827 - -

Popular Products

Category Top Products

FGH60N60SFDTU by Fairchild Semiconductor

FGH60N60SFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel;
STGP20V60DF by STMicroelectronics

STGP20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
ISL9V3040D3ST by Onsemi

ISL9V3040D3ST

Onsemi

ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
FF600R12ME4B11BPSA2 by Infineon Technologies

FF600R12ME4B11BPSA2

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CM300DU-24NFH by Mitsubishi Electric

CM300DU-24NFH

Mitsubishi Electric

Mitsubishi Electric's CM300DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Features include 1200V VCEsat, 300A IC, and 1900W power dissipation. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
FGH40N60SFDTU_F085 by Fairchild Semiconductor

FGH40N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
HGTG10N120BND by Fairchild Semiconductor

HGTG10N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
FP100R12KT4B11BOSA1 by Infineon Technologies

FP100R12KT4B11BOSA1

Infineon Technologies

Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
MMIX4G20N250 by Littelfuse

MMIX4G20N250

Littelfuse

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.
IGW50N60TPXKSA1 by Infineon Technologies

IGW50N60TPXKSA1

Infineon Technologies

IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
HGTG30N60C3D by Intersil

HGTG30N60C3D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
SGP15N120XKSA1 by Infineon Technologies

SGP15N120XKSA1

Infineon Technologies

SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.
ISL9V3036S3ST by Fairchild Semiconductor

ISL9V3036S3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
IRG7PH50K10DPBF by Infineon Technologies

IRG7PH50K10DPBF

Infineon Technologies

Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.
IKB40N65EH5ATMA1 by Infineon Technologies

IKB40N65EH5ATMA1

Infineon Technologies

IKB40N65EH5ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 74A. It is designed for power control applications, featuring a built-in diode, small outline package style, and operating temperature range from -40 to 175 °C.
CM600DU-12NFH by Mitsubishi Electric

CM600DU-12NFH

Mitsubishi Electric

Mitsubishi Electric's CM600DU-12NFH is a N-CHANNEL IGBT with 2 elements, each with built-in diode. It has a max VCEsat of 2.7V and can handle up to 600A collector current. Ideal for power control applications, this IGBT operates at a max temperature of 150°C and has an isolated case connection.
FF400R06KE3HOSA1 by Infineon Technologies

FF400R06KE3HOSA1

Infineon Technologies

FF400R06KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 500A. It is designed for power control applications, offering a nominal turn-off time of 600ns and a nominal turn-on time of 190ns.
BSM75GB120DN2 by Eupec & Kg

BSM75GB120DN2

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.