Infineon Technologies - IGW25T120FKSA1

IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.

IRG4IBC20KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 34W. It has a Nominal Turn Off Time of 380ns, making it ideal for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities. The package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for various power control systems operating up to 150°C.

FS200R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a toff of 450 ns, ton of 210 ns, and can handle up to 200 A collector current. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

Infineon Technologies' SGW20N60 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 40A max collector current. Ideal for motor control applications, it has a rise time of 46ns, fall time of 65ns, and turn-off time of 313ns. Package style is flange mount with through-hole terminals.

SGS10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 35W Pd. Ideal for MOTOR CONTROL applications due to its fast tf of 220ns and toff of 284ns. The package style is FLANGE MOUNT with a max operating temp of 150°C.

IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.

F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.

FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.

IRG4BC30KDPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 28A max collector current. It has a 120ns fall time, 370ns turn off time, and can handle up to 100W power dissipation. Ideal for motor control applications due to its single configuration and flange mount package style.

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.

IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.

IRG4PH50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a collector current of 45A. It has a nominal turn-off time of 570ns and turn-on time of 73ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals and built-in diode, suitable for flange mount installations.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 38 A; Package Shape: RECTANGULAR;

FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;

IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.

NGTB40N120FL3WG by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 326ns and a max operating temperature of 175°C.

Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.