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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRG4BC30FPBF |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; |
Datasheet | IRG4BC30FPBF Datasheet |
In Stock | 270 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 31 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 640 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 100 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 36 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Fall Time (tf): | 270 ns |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | N-CHANNEL |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Additional Features: | FAST SPEED |
Peak Reflow Temperature (C): | NOT SPECIFIED |