Infineon Technologies - IGB50N65S5ATMA1

  1. Home
  2. Infineon Technologies - IGB50N65S5ATMA1
IGB50N65S5ATMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IGB50N65S5ATMA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 2;
Datasheet IGB50N65S5ATMA1 Datasheet
In Stock1,034
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Surface Mount: YES
Terminal Finish: TIN
Nominal Turn Off Time (toff): 215 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 270 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 51 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.7 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,034 - -

Popular Products

Category Top Products

IXYN82N120C3H1 by IXYS Corporation

IXYN82N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;
F1225R12KT4GBOSA1 by Infineon Technologies

F1225R12KT4GBOSA1

Infineon Technologies

F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.
IXGH100N30C3 by IXYS Corporation

IXGH100N30C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Case Connection: COLLECTOR; No. of Terminals: 3;
SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.
IXXN110N65C4H1 by IXYS Corporation

IXXN110N65C4H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 210 A; Maximum VCEsat: 2.35 V;
FP25R12W2T4P_B11ENG by Infineon Technologies

FP25R12W2T4P_B11ENG

Infineon Technologies

Infineon's FP25R12W2T4P_B11ENG IGBT features 1200V VCEsat, 520ns toff, and 47ns ton. Ideal for high-power applications in industries like automotive, renewable energy, and industrial automation due to its N-Channel polarity and -40°C to 150°C operating temperature range.
IXGH10N170A by Littelfuse

IXGH10N170A

Littelfuse

IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
IRG4PF50WPBF by International Rectifier

IRG4PF50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;
IRG4BC40WLPBF by Infineon Technologies

IRG4BC40WLPBF

Infineon Technologies

IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.
IXXX160N65B4 by Littelfuse

IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
FGH40T120SMD_F155 by Fairchild Semiconductor

FGH40T120SMD_F155

Fairchild Semiconductor

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.
IXDN55N120D1 by IXYS Corporation

IXDN55N120D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
IXXX200N60B3 by Littelfuse

IXXX200N60B3

Littelfuse

Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.
2MBI200VA-060-50 by Fuji Electric

2MBI200VA-060-50

Fuji Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;
IRGP4266DPBF by International Rectifier

IRGP4266DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;
IHW30N135R5XKSA1 by Infineon Technologies

IHW30N135R5XKSA1

Infineon Technologies

IHW30N135R5XKSA1 by Infineon Technologies is an N-Channel IGBT with VCEsat of 1.95V, toff of 430ns, and Pmax of 330W. Ideal for high-power applications like industrial motor drives due to its high VCE voltage rating, low saturation voltage, and fast turn-off time.
IXXX100N60C3H1 by Littelfuse

IXXX100N60C3H1

Littelfuse

The Littelfuse IXXX100N60C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.2V and IC of 170A, ideal for POWER CONTROL applications. It has a package style of IN-LINE, operating temperature range from -55 to 150 °C, and a turn-off time of 220ns.
FGH50N6S2D by Fairchild Semiconductor

FGH50N6S2D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;
SKW30N60FKSA1 by Infineon Technologies

SKW30N60FKSA1

Infineon Technologies

SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.
IRG7PH50K10D-EPBF by International Rectifier

IRG7PH50K10D-EPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 30 V;