IRG4PC50FD-EPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG4PC50FD-EPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet	IRG4PC50FD-EPBF Datasheet
In Stock	264

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	70 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
JEDEC-95 Code:	TO-247AD
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	660 ns
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	86 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	ULTRA FAST SOFT RECOVERY
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
264	-	-

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;