HGT1S10N120BNST by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	HGT1S10N120BNST
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-30 Code: R-PSSO-G2;
Datasheet	HGT1S10N120BNST Datasheet
In Stock	12,809

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	35 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	15 ns
Transistor Application:	MOTOR CONTROL
Maximum Turn On Time (ton):	40 ns
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	330 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	298 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	32 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	450 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	200 ns
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	4.2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
12,809	-	-

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