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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | HGT1S10N120BNST |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-30 Code: R-PSSO-G2; |
| Datasheet | HGT1S10N120BNST Datasheet |
| In Stock | 12,809 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 35 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 15 ns |
| Transistor Application: | MOTOR CONTROL |
| Maximum Turn On Time (ton): | 40 ns |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| Nominal Turn Off Time (toff): | 330 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 298 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 32 ns |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 450 ns |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Fall Time (tf): | 200 ns |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | LOW CONDUCTION LOSS |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | 4.2 V |
