Toshiba - GT40WR21,Q(O

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GT40WR21,Q(O by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT40WR21,Q(O
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel; Maximum Fall Time (tf): 350 ns;
Datasheet GT40WR21,Q(O Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 40 A
Maximum Power Dissipation (Abs): 375 W
Maximum Collector-Emitter Voltage: 1800 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 350 ns
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