Vishay Intertechnology - VS-CPV364M4FPBF

  1. Home
  2. Vishay Intertechnology - VS-CPV364M4FPBF
VS-CPV364M4FPBF by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number VS-CPV364M4FPBF
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 27 A; Transistor Element Material: SILICON;
Datasheet VS-CPV364M4FPBF Datasheet
In Stock1,480
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 27 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Surface Mount: NO
Nominal Turn Off Time (toff): 380 ns
No. of Terminals: 13
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 60 ns
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 570 ns
JESD-30 Code: R-PSFM-T13
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Fall Time (tf): 240 ns
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL RECOGNIZED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,480 - -

Popular Products

Category Top Products

IRG4BC40KPBF by Infineon Technologies

IRG4BC40KPBF

Infineon Technologies

IRG4BC40KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 42A max collector current. It has a single configuration for MOTOR CONTROL applications, offering a max power dissipation of 160W. The transistor features a package style of FLANGE MOUNT and can operate at temperatures up to 150°C.
SKM200GB125D by Semikron International

SKM200GB125D

Semikron International

Semikron International's SKM200GB125D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 200A, and toff of 445ns. Ideal for POWER CONTROL applications, it operates at up to 150°C with a VCE of 1200V.
BSM75GB120DN2HOSA1 by Infineon Technologies

BSM75GB120DN2HOSA1

Infineon Technologies

Infineon's BSM75GB120DN2HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max Collector-Emitter Voltage of 1200V and Max Collector Current of 75A, it offers fast switching with Nominal Turn Off Time of 520ns and Nominal Turn On Time of 100ns. The package style is FLANGE MOUNT with 7 terminals in an ISOLATED case connection.
FGH40N60UFTU by Onsemi

FGH40N60UFTU

Onsemi

FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.
IRFS7434TRL7PP by International Rectifier

IRFS7434TRL7PP

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Maximum Drain Current (ID): 240 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FF900R12IE4VBOSA1 by Infineon Technologies

FF900R12IE4VBOSA1

Infineon Technologies

FF900R12IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 940ns and a nominal turn-on time of 350ns. This IGBT is commonly used in applications that require high power switching, such as motor drives and power supplies.
IXXX160N65B4 by Littelfuse

IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
FGL60N100BNTDTU by Fairchild Semiconductor

FGL60N100BNTDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IRG4PC30UDPBF by International Rectifier

IRG4PC30UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IKD04N60RFBTMA1 by Infineon Technologies

IKD04N60RFBTMA1

Infineon Technologies

IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.
IXXX160N65C4 by IXYS Corporation

IXXX160N65C4

IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
APT150GN120JDQ4 by Microchip Technology

APT150GN120JDQ4

Microchip Technology

Microchip Technology's APT150GN120JDQ4 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 215A, and Ptot of 625W. Ideal for power control applications due to its fast turn-off time (toff) of 955ns and high collector-emitter voltage rating of 1200V. Package style is flange mount with isolated case connection.
FS50R06W1E3B11BOMA1 by Infineon Technologies

FS50R06W1E3B11BOMA1

Infineon Technologies

Infineon FS50R06W1E3B11BOMA1 is a N-CHANNEL IGBT with 600V VCE, 70A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.
IXGH6N170 by Littelfuse

IXGH6N170

Littelfuse

IXGH6N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 12A max collector current, and 75W max power dissipation. Ideal for motor control applications due to its single configuration and 600ns nominal turn off time.
CM600DU-24NFH by Powerex

CM600DU-24NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; No. of Terminals: 7; Transistor Application: POWER CONTROL;
IKD06N60RATMA1 by Infineon Technologies

IKD06N60RATMA1

Infineon Technologies

IKD06N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a built-in diode, 335ns turn-off time, and 22ns turn-on time. Ideal for power control applications due to its 100W max power dissipation and small outline package style.
FGHL50T65SQ by Onsemi

FGHL50T65SQ

Onsemi

The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.
IRG4PC30UPBF by International Rectifier

IRG4PC30UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Transistor Application: POWER CONTROL;
HGTG11N120CND by Harris Semiconductor

HGTG11N120CND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
IXGR32N170H1 by Littelfuse

IXGR32N170H1

Littelfuse

IXGR32N170H1 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 38A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 150°C.