Infineon Technologies - IKD04N60RAATMA1

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IKD04N60RAATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD04N60RAATMA1
Description N-Channel; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum VCEsat: 2.1 V;
Datasheet IKD04N60RAATMA1 Datasheet
In Stock4,174
NAME DESCRIPTION
Other Names: INFINFIKD04N60RAATMA1
2156-IKD04N60RAATMA1
SP000943854
Maximum Collector Current (IC): 8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 342 ns
Maximum Power Dissipation (Abs): 75 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 20 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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