Onsemi - NXH50C120L2C2ES1G

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NXH50C120L2C2ES1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH50C120L2C2ES1G
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 50 A; No. of Elements: 6; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet NXH50C120L2C2ES1G Datasheet
In Stock469
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 50 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.8 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 616 ns
No. of Terminals: 26
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: DUAL
Nominal Turn On Time (ton): 248 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T26
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.4 V
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