Infineon Technologies - IRG7PH50K10D-EPBF

IRG7PH50K10D-EPBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7PH50K10D-EPBF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Fall Time (tf): 110 ns;
Datasheet	IRG7PH50K10D-EPBF Datasheet
In Stock	9,596

IRG7PH50K10D-EPBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	90 A
Maximum Power Dissipation (Abs):	400 W
Maximum Collector-Emitter Voltage:	1200 V
Maximum Rise Time (tr):	80 ns
Maximum Gate-Emitter Threshold Voltage:	7.5 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Maximum Fall Time (tf):	110 ns

Pricing (USD)

Qty.	Unit Price	Ext. Price
9,596	-	-

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