Littelfuse - IXBX75N170

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IXBX75N170 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXBX75N170
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Threshold Voltage: 5.5 V;
Datasheet IXBX75N170 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 200 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
Nominal Turn Off Time (toff): 840 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1040 W
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 277 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: COLLECTOR
Maximum VCEsat: 3.1 V
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