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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FS150R12KT4B9BOSA1 |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 33; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; |
| Datasheet | FS150R12KT4B9BOSA1 Datasheet |
| In Stock | 5 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 525 ns |
| No. of Terminals: | 33 |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 196 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X33 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
