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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | APTGT75A60T1G |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 1.9 V; |
| Datasheet | APTGT75A60T1G Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 100 A |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | MOTOR CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| Nominal Turn Off Time (toff): | 310 ns |
| No. of Terminals: | 12 |
| Maximum Power Dissipation (Abs): | 250 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 170 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-T12 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 1.9 V |
