Infineon Technologies - FS50R07W1E3B11ABOMA1

  1. Home
  2. Infineon Technologies - FS50R07W1E3B11ABOMA1
FS50R07W1E3B11ABOMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FS50R07W1E3B11ABOMA1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 18; Nominal Turn Off Time (toff): 250 ns;
Datasheet FS50R07W1E3B11ABOMA1 Datasheet
In Stock14
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 70 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 250 ns
No. of Terminals: 18
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 45 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
14 - -

Popular Products

Category Top Products

IXGH6N170A by Littelfuse

IXGH6N170A

Littelfuse

IXGH6N170A by Littelfuse is an N-CHANNEL IGBT transistor with 1700V max collector-emitter voltage, 75W power dissipation, and 65ns fall time. Ideal for power control applications due to its single configuration and through-hole terminal form.
IXGH10N170 by IXYS Corporation

IXGH10N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
BSM50GP120 by Infineon Technologies

BSM50GP120

Infineon Technologies

BSM50GP120 by Infineon: N-CHANNEL IGBT with VCEsat of 2.55V, IC of 80A, and Pmax of 360W. Ideal for power electronics applications requiring high voltage (1200V) and current handling capabilities in complex configurations.
HGTG10N120BND by Onsemi

HGTG10N120BND

Onsemi

HGTG10N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 35A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn off time of 330ns. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.
ISL9V5036P3_F085 by Fairchild Semiconductor

ISL9V5036P3_F085

Fairchild Semiconductor

Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
IRG4PC50KPBF by International Rectifier

IRG4PC50KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 52 A; Maximum Power Dissipation Ambient: 200 W;
SKM150GB12T4 by Semikron International

SKM150GB12T4

Semikron International

SKM150GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V and can handle up to 230A of collector current. Ideal for POWER CONTROL applications, this device operates at a max temperature of 175°C with a collector-emitter voltage rating of 1200V.
IRG7PH50K10D-EPBF by Infineon Technologies

IRG7PH50K10D-EPBF

Infineon Technologies

IRG7PH50K10D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with tr of 80ns, tf of 110ns, and Pdiss of 400W. It operates at a max Vce of 1200V and max IC of 90A, suitable for high-power applications in industrial electronics and motor control systems.
APT75GP120J by Advanced Power Technology

APT75GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
STGW40N120KD by STMicroelectronics

STGW40N120KD

STMicroelectronics

STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
IKW40N65ES5XKSA1 by Infineon Technologies

IKW40N65ES5XKSA1

Infineon Technologies

IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
IKA10N65ET6XKSA2 by Infineon Technologies

IKA10N65ET6XKSA2

Infineon Technologies

IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.
FZ400R17KE4HOSA1 by Infineon Technologies

FZ400R17KE4HOSA1

Infineon Technologies

FZ400R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1700V and current of 550A. It has a turn on time of 355ns and turn off time of 930ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
FP10R12W1T4B11BOMA1 by Infineon Technologies

FP10R12W1T4B11BOMA1

Infineon Technologies

Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
FGH40T65SPD_F155 by Onsemi

FGH40T65SPD_F155

Onsemi

FGH40T65SPD_F155 by Onsemi is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 267W Ptot. Ideal for power control applications, it features a built-in diode, 56ns toff, and operates up to 175°C.
IRG4BC30FPBF by International Rectifier

IRG4BC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
IXXX200N60C3 by IXYS Corporation

IXXX200N60C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);
APT100GN60LDQ4G by Advanced Power Technology

APT100GN60LDQ4G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSFM-T3; Nominal Turn Off Time (toff): 435 ns;
IXXX200N60B3 by Littelfuse

IXXX200N60B3

Littelfuse

Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.
STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.