Infineon Technologies - IRGP4650D-EPBF

IRGP4650D-EPBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGP4650D-EPBF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 76 A; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet	IRGP4650D-EPBF Datasheet
In Stock	14,289

IRGP4650D-EPBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	76 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Rise Time (tr):	42 ns
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Maximum Power Dissipation (Abs):	268 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Fall Time (tf):	54 ns

Pricing (USD)

Qty.	Unit Price	Ext. Price
14,289	-	-

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