STMicroelectronics - STGIPL14K60

  1. Home
  2. STMicroelectronics - STGIPL14K60
STGIPL14K60 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGIPL14K60
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 14 A; Maximum Collector-Emitter Voltage: 600 V;
Datasheet STGIPL14K60 Datasheet
In Stock5
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 14 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 425 ns
No. of Terminals: 38
Maximum Power Dissipation (Abs): 44 W
Terminal Position: DUAL
Nominal Turn On Time (ton): 400 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T38
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 125 Cel
Case Connection: ISOLATED
Other Names: 497-10571-5
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum VCEsat: 2.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5 - -

Popular Products

Category Top Products

FF600R12KE4EBOSA1 by Infineon Technologies

FF600R12KE4EBOSA1

Infineon Technologies

FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.
IXGH32N170A by Littelfuse

IXGH32N170A

Littelfuse

IXGH32N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 32A max collector current, and 370ns nominal turn-off time. Ideal for motor control applications due to its single configuration and flange mount package style.
IKW50N60TAFKSA1 by Infineon Technologies

IKW50N60TAFKSA1

Infineon Technologies

IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
FF600R17ME4BOSA1 by Infineon Technologies

FF600R17ME4BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
IRG4BC30FD1PBF by Infineon Technologies

IRG4BC30FD1PBF

Infineon Technologies

IRG4BC30FD1PBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a 740ns turn off time, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can handle up to 100W of power dissipation at a max operating temperature of 150°C.
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
IRG4PH50SPBF by International Rectifier

IRG4PH50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
HGTG20N60A4D by Intersil

HGTG20N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Maximum Fall Time (tf): 73 ns;
IRG7PH42UD1PBF by International Rectifier

IRG7PH42UD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 78 A; Package Shape: RECTANGULAR;
FZ1200R45HL3BPSA1 by Infineon Technologies

FZ1200R45HL3BPSA1

Infineon Technologies

FZ1200R45HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4500V max collector-emitter voltage. It has a complex configuration, 6670ns turn-off time, and 1100ns turn-on time. Ideal for power control applications, this device features a plastic/epoxy package body and operates from -40°C.
IKW25N120H3 by Infineon Technologies

IKW25N120H3

Infineon Technologies

IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FGH40N60UFDTU by Onsemi

FGH40N60UFDTU

Onsemi

FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.
IRG4PSH71UDPBF by Infineon Technologies

IRG4PSH71UDPBF

Infineon Technologies

Infineon's IRG4PSH71UDPBF is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 99A max collector current. It features a built-in diode, 330ns fall time, and 810ns turn off time. Ideal for power control applications with a max power dissipation of 350W at up to 150°C operating temperature.
STGW25H120DF2 by STMicroelectronics

STGW25H120DF2

STMicroelectronics

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
FP20R06W1E3B11BOMA1 by Infineon Technologies

FP20R06W1E3B11BOMA1

Infineon Technologies

Infineon Technologies' FP20R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 600V VCE, 27A IC, and 250ns toff. Ideal for power control applications due to its complex configuration and UL approval.
FF450R17ME4BOSA1 by Infineon Technologies

FF450R17ME4BOSA1

Infineon Technologies

FF450R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, max current of 600A, and turn off time of 1600ns. Ideal for power control applications due to its high operating temperature of 175°C and fast turn on time of 380ns.
FGH60N60SMD by Fairchild Semiconductor

FGH60N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Case Connection: COLLECTOR;
FS200R12KT4RBOSA1 by Infineon Technologies

FS200R12KT4RBOSA1

Infineon Technologies

Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.