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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRGPS60B120KDP |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 105 A; No. of Terminals: 3; |
Datasheet | IRGPS60B120KDP Datasheet |
In Stock | 137 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 105 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 45 ns |
Transistor Application: | MOTOR CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 411 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 595 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 104 ns |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Fall Time (tf): | 58 ns |
JEDEC-95 Code: | TO-274AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 1200 V |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |