Infineon Technologies - IRGR2B60KDTRLPBF

  1. Home
  2. Infineon Technologies - IRGR2B60KDTRLPBF
IRGR2B60KDTRLPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGR2B60KDTRLPBF
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet IRGR2B60KDTRLPBF Datasheet
In Stock1,266
NAME DESCRIPTION
Maximum Collector Current (IC): 6.3 A
Maximum Power Dissipation (Abs): 35 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Rise Time (tr): 25 ns
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Fall Time (tf): 75 ns
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,266 - -

Popular Products

Category Top Products

FF900R12IE4BOSA1 by Infineon Technologies

FF900R12IE4BOSA1

Infineon Technologies

FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
F3L75R12W1H3B27BOMA1 by Infineon Technologies

F3L75R12W1H3B27BOMA1

Infineon Technologies

Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
STGB3NC120HDT4 by STMicroelectronics

STGB3NC120HDT4

STMicroelectronics

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.
FS450R17KE3 by Eupec & Kg

FS450R17KE3

Eupec & Kg

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; No. of Terminals: 29; Terminal Position: UPPER;
IRG4PH50SPBF by Infineon Technologies

IRG4PH50SPBF

Infineon Technologies

IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IKW25N120H3 by Infineon Technologies

IKW25N120H3

Infineon Technologies

IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FP10R12W1T4BOMA1 by Infineon Technologies

FP10R12W1T4BOMA1

Infineon Technologies

Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
CM600DX-24T by Mitsubishi Electric

CM600DX-24T

Mitsubishi Electric

The Mitsubishi Electric CM600DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode and thermistor. It has a max VCEsat of 2.05V and can handle up to 600A collector current. Ideal for power control applications, it operates b/w -40 to 150 °C with UL recognition.
STGB20N45LZAG by STMicroelectronics

STGB20N45LZAG

STMicroelectronics

STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
APT85GR120JD60 by Microchip Technology

APT85GR120JD60

Microchip Technology

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.
FGA25N120ANTDTU by Onsemi

FGA25N120ANTDTU

Onsemi

FGA25N120ANTDTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 25A IC, and 312W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
FGH40T120SMD by Onsemi

FGH40T120SMD

Onsemi

FGH40T120SMD by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at temperatures up to 175°C.
IXA70I1200NA by Littelfuse

IXA70I1200NA

Littelfuse

IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.
IHW30N160R5XKSA1 by Infineon Technologies

IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
FGA25N120ANTDTU by Rochester Electronics

FGA25N120ANTDTU

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
2MBI100VA-060-50 by Fujitsu

2MBI100VA-060-50

Fujitsu

Fujitsu 2MBI100VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, current of 100A, and turn-off time of 600ns. Ideal for MOTOR CONTROL applications due to its configuration and performance specs.
FP25R12KE3BOSA1 by Infineon Technologies

FP25R12KE3BOSA1

Infineon Technologies

FP25R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 610ns nominal turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and isolated case connection.
HGTG30N60C3D by Intersil

HGTG30N60C3D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
NGTB20N120IHRWG by Onsemi

NGTB20N120IHRWG

Onsemi

NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IXXX100N60C3H1 by IXYS Corporation

IXXX100N60C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;