BSM150GT120DN2 by Eupec & Kg | Transistors

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Manufacturer	Eupec & Kg
Manufacturer's Part Number	BSM150GT120DN2
Description	N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 150 A; Qualification: Not Qualified;
Datasheet	BSM150GT120DN2 Datasheet
In Stock	859

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	150 A
Configuration:	3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	670 ns
No. of Terminals:	39
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1250 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	300 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X39
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
859	-	-

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