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| Manufacturer | IXYS Corporation |
|---|---|
| Manufacturer's Part Number | MMIX4G20N250 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4; |
| Datasheet | MMIX4G20N250 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 23 A |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | GENERAL PURPOSE SWITCHING |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Nominal Turn Off Time (toff): | 1066 ns |
| No. of Terminals: | 9 |
| Maximum Power Dissipation (Abs): | 100 W |
| Maximum Collector-Emitter Voltage: | 2500 V |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 217 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G9 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Maximum VCEsat: | 3.1 V |
