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Manufacturer | Fairchild Semiconductor |
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Manufacturer's Part Number | ISL9V2040D3ST |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2; |
Datasheet | ISL9V2040D3ST Datasheet |
In Stock | 30,910 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 10 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | AUTOMOTIVE IGNITION |
Maximum Gate-Emitter Threshold Voltage: | 2.3 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
Nominal Turn Off Time (toff): | 6000 ns |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 130 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 2780 ns |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | COLLECTOR |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 390 V |
Maximum Gate-Emitter Voltage: | 12 V |
Peak Reflow Temperature (C): | 260 |