Infineon Technologies - FB30R06W1E3ENG

  1. Home
  2. Infineon Technologies - FB30R06W1E3ENG
FB30R06W1E3ENG by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FB30R06W1E3ENG
Description N-Channel; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 39 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
Datasheet FB30R06W1E3ENG Datasheet
In Stock1,236
NAME DESCRIPTION
Maximum Collector Current (IC): 39 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 245 ns
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 42 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,236 - -

Popular Products

Category Top Products

HGTG40N60B3 by Harris Semiconductor

HGTG40N60B3

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
FS25R12KE3GBOSA1 by Infineon Technologies

FS25R12KE3GBOSA1

Infineon Technologies

FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
HGTG30N60A4D by Intersil

HGTG30N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Additional Features: LOW CONDUCTION LOSS;
IRGS14C40LPBF by Infineon Technologies

IRGS14C40LPBF

Infineon Technologies

IRGS14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max collector current of 20A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package style. The transistor has a max power dissipation of 125W and can operate at temperatures up to 175°C.
IRG7PH50K10DPBF by International Rectifier

IRG7PH50K10DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
FP15R06W1E3BOMA1 by Infineon Technologies

FP15R06W1E3BOMA1

Infineon Technologies

FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.
HGTG40N60C3 by Intersil

HGTG40N60C3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
HGTG40N60B3 by Intersil

HGTG40N60B3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
FGH40N60SFDTU by Fairchild Semiconductor

FGH40N60SFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR;
IRG7PH42UD2PBF by International Rectifier

IRG7PH42UD2PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
STGD10NC60HT4 by STMicroelectronics

STGD10NC60HT4

STMicroelectronics

STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.
6PS18012E4FG35689NWSA1 by Infineon Technologies

6PS18012E4FG35689NWSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IRG4BC20UDPBF by International Rectifier

IRG4BC20UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; JEDEC-95 Code: TO-220AB;
FGD4536TM by Onsemi

FGD4536TM

Onsemi

FGD4536TM by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max power dissipation of 125W. It is designed for general purpose switching applications, featuring a small outline package style and a max operating temperature of 150°C.
IRGP4266DPBF by Infineon Technologies

IRGP4266DPBF

Infineon Technologies

Infineon's IRGP4266DPBF is an N-CHANNEL IGBT with tr of 90ns and tf of 80ns. It boasts a max power dissipation of 455W, ideal for high-power applications. With Vce(max) at 650V and Ic(max) at 140A, it's suitable for industrial motor drives and renewable energy systems.
FZ600R17KE3S4HOSA1 by Infineon Technologies

FZ600R17KE3S4HOSA1

Infineon Technologies

Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
NGTB15N120LWG by Onsemi

NGTB15N120LWG

Onsemi

NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
SKM150GB12T4G by Semikron International

SKM150GB12T4G

Semikron International

SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
2MBI200VA-060-50 by Fujitsu

2MBI200VA-060-50

Fujitsu

Fujitsu's 2MBI200VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. Ideal for MOTOR CONTROL applications, it has a max. Collector-Emitter Voltage of 600V and max. Collector Current of 200A. Features include Nominal Turn Off Time of 600ns and Nominal Turn On Time of 650ns in a RECTANGULAR package style with FLANGE MOUNT.