FP25R12W2T4 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FP25R12W2T4
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED;
Datasheet	FP25R12W2T4 Datasheet
In Stock	36

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	39 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	685 ns
No. of Terminals:	35
Maximum Power Dissipation (Abs):	175 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	133 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X35
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
36	-	-

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