STMicroelectronics - STGB25N40LZAG

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STGB25N40LZAG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB25N40LZAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; No. of Terminals: 2;
Datasheet STGB25N40LZAG Datasheet
In Stock2,746
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Surface Mount: YES
Nominal Turn Off Time (toff): 14500 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 4560 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 435 V
Maximum Gate-Emitter Voltage: 16 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.25 V
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