F475R12KS4BOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	F475R12KS4BOSA1
Description	N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 100 A; Package Style (Meter): FLANGE MOUNT;
Datasheet	F475R12KS4BOSA1 Datasheet
In Stock	1,514

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	390 ns
No. of Terminals:	24
Maximum Power Dissipation (Abs):	500 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	190 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X24
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	3.75 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,514	-	-

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