V23990-K230-F40-/0B/-PM by Vincotech | Transistors

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Manufacturer	Vincotech
Manufacturer's Part Number	V23990-K230-F40-/0B/-PM
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 88 A; Maximum VCEsat: 2.2 V;
Datasheet	V23990-K230-F40-/0B/-PM Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	88 A
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.3 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	411 ns
No. of Terminals:	39
Maximum Power Dissipation (Abs):	246 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	125 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X39
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.2 V

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