STMicroelectronics - STGB30V60DF

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STGB30V60DF by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB30V60DF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; No. of Terminals: 2; Terminal Position: SINGLE;
Datasheet STGB30V60DF Datasheet
In Stock3,535
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-263AB
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 225 ns
No. of Terminals: 2
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 59 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: COLLECTOR
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
3,535 $0.470 $1,661.450

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