Microsemi - APT50GR120JD30

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APT50GR120JD30 by Microsemi

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Manufacturer Microsemi
Manufacturer's Part Number APT50GR120JD30
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
Datasheet APT50GR120JD30 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 84 A
Maximum Power Dissipation (Abs): 417 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
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