Infineon Technologies - IKD04N60RATMA1

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IKD04N60RATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD04N60RATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;
Datasheet IKD04N60RATMA1 Datasheet
In Stock2,744
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: TIN
Nominal Turn Off Time (toff): 342 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 20 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage: 20 V
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