Infineon Technologies - IRGP4263PBF

  1. Home
  2. Infineon Technologies - IRGP4263PBF
IRGP4263PBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGP4263PBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 90 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IRGP4263PBF Datasheet
In Stock1,642
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 80 ns
Maximum Gate-Emitter Threshold Voltage: 7.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 300 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 50 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,642 - -

Popular Products

Category Top Products

BSM50GP120 by Eupec & Kg

BSM50GP120

Eupec & Kg

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 35;
FF1400R12IP4BOSA1 by Infineon Technologies

FF1400R12IP4BOSA1

Infineon Technologies

FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
FB30R06W1E3ENG by Infineon Technologies

FB30R06W1E3ENG

Infineon Technologies

Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.
IRG4BC40WLPBF by International Rectifier

IRG4BC40WLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 110 ns;
F3L75R07W2E3B11BOMA1 by Infineon Technologies

F3L75R07W2E3B11BOMA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.
APTGT75A60T1G by Microchip Technology

APTGT75A60T1G

Microchip Technology

APTGT75A60T1G by Microchip Technology is an N-CHANNEL IGBT transistor with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and is ideal for MOTOR CONTROL applications. With a Max Collector Current of 100A and Max Power Dissipation of 250W, it offers efficient performance in RECTANGULAR package style.
NGTB15N120FLWG by Onsemi

NGTB15N120FLWG

Onsemi

NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
FS150R12KT3 by Infineon Technologies

FS150R12KT3

Infineon Technologies

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.
FP25R12W1T7B11BPSA1 by Infineon Technologies

FP25R12W1T7B11BPSA1

Infineon Technologies

Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
FS25R12KE3GBOSA1 by Infineon Technologies

FS25R12KE3GBOSA1

Infineon Technologies

FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
FS400R07A3E3H6BPSA1 by Infineon Technologies

FS400R07A3E3H6BPSA1

Infineon Technologies

Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
FGD5T120SH by Fairchild Semiconductor

FGD5T120SH

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
IGP40N65F5XKSA1 by Infineon Technologies

IGP40N65F5XKSA1

Infineon Technologies

Infineon Technologies' IGP40N65F5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment, renewable energy systems, and motor drives.
SKW30N60FKSA1 by Infineon Technologies

SKW30N60FKSA1

Infineon Technologies

SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.
IKW75N65ES5XKSA1 by Infineon Technologies

IKW75N65ES5XKSA1

Infineon Technologies

IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.
IXGH24N170 by IXYS Corporation

IXGH24N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1700 V;
FP40R12KE3BOSA1 by Infineon Technologies

FP40R12KE3BOSA1

Infineon Technologies

FP40R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 55A max collector current, and 610ns nominal turn off time. It is used for power control applications due to its complex configuration and silicon transistor element material. The package style is flange mount with a rectangular shape and wire terminals.
IXGA20N120A3 by IXYS Corporation

IXGA20N120A3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.