IRG4BC20WPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG4BC20WPBF
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	IRG4BC20WPBF Datasheet
In Stock	2,306

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	13 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	300 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	60 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	36 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	96 ns
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,306	-	-

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;