Infineon Technologies - SGB02N120ATMA1

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SGB02N120ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SGB02N120ATMA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6.2 A; Qualification: Not Qualified; Nominal Turn Off Time (toff): 375 ns;
Datasheet SGB02N120ATMA1 Datasheet
In Stock11,116
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 6.2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Surface Mount: YES
Terminal Finish: TIN
Nominal Turn Off Time (toff): 375 ns
No. of Terminals: 2
Terminal Position: SINGLE
Nominal Turn On Time (ton): 40 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: SGB02N120DKR
SGB02N120ATMA1TR
SGB02N120TR-ND
SGB02N120-ND
2156-SGB02N120ATMA1
SGB02N120CT-ND
SGB02N120ATMA1DKR
IFEINFSGB02N120ATMA1
SGB02N120ATMA1CT
SGB02N120
SP000012558
SGB02N120CT
SGB02N120DKR-ND
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
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