SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGB20N60H3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

31 ns

IGP10N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

IGW25N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

397 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

61 ns

IGW40N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

78 ns

IGW40T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

IGW75N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IXGH100N30B3

Littelfuse

N-CHANNEL

SINGLE

NO

460 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

143 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

10

260

78 ns

IXGH32N170

Littelfuse

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

920 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

90 ns

IXGH48N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

IXGT6N170AHV-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

7 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

91 ns

IXXH110N65C4

Littelfuse

N-CHANNEL

SINGLE

NO

880 W

235 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

71 ns

SGW20N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

SGW20N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

SGW20N60XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

313 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

66 ns

SGW25N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

46 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

862 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

86 ns

STGP100N30

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

90 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

20 V

5.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AFGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

APT25GT120BRG

Microchip Technology

N-CHANNEL

SINGLE

NO

54 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AA

e1

41 ns

HGTG27N120BN

Onsemi

N-CHANNEL

SINGLE

NO

72 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS, AVALANCHE RATED

TO-247

e3

42 ns

IGP06N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

17 ns

IGW03N120H2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

16.1 ns

IGW08T120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

66 ns

IGW30N100TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

569 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

54 ns

IGZ100N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

161 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

40 ns

IRG4BC30W-STRL

International Rectifier

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

41 ns

IRG4BC30W-STRR

International Rectifier

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

41 ns

IRG4BC40WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

174 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PH40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

690 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

49 ns

IRG7PH50UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

556 W

140 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

75 ns

IXEL40N400

Littelfuse

N-CHANNEL

SINGLE

NO

380 W

40 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1170 ns

3

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

4000 V

20 V

7 V

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

SGP02N120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

6.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

375 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

SIGC186T170R3EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

9

UNCASED CHIP

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

STGD7NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

55 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

1160 ns

STGP30NC60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

175 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

555 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

30 ns

STGP30V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

59 ns

HGTG30N60A4

Onsemi

N-CHANNEL

SINGLE

NO

463 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

70 ns

238 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

35 ns

IXGA30N120B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

IXGT10N170A

Littelfuse

N-CHANNEL

SINGLE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

240 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268

e3

10

260

107 ns

STGW50HF60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

284 W

110 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

HGT1S20N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

52 ns

HGTG20N60C3R

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

45 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

388 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

52 ns

SGP07N120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

16.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

56 ns

APT50GN60BG

Microchip Technology

N-CHANNEL

SINGLE

NO

366 W

107 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

45 ns

IXGH16N170

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

32 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1100 ns

1600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

90 ns

STGW60V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

243 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

80 ns

IXYH85N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

300 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

990 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

73 ns

IXGT16N170A

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

150 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

97 ns

MG150J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

450 W

150 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

450 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.