Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
305 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
231 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
|||||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
GULL WING |
RECTANGULAR |
1 |
380 ns |
331 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
53 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
375 W |
76 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
440 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
48 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
385 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
178 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
42 W |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
24 ns |
GULL WING |
RECTANGULAR |
1 |
61 ns |
375 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
3 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
260 |
40 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
78 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
10 |
UNCASED CHIP |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUUC-N10 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
42.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
e3 |
42.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
104 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
62.5 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1500 V |
20 V |
4 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
e3 |
25 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.9 V |
NO LEAD |
SQUARE |
1 |
332 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
AEC-Q101 |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
298 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
16 ns |
2.4 V |
GULL WING |
RECTANGULAR |
1 |
400 ns |
550 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
680 ns |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
AVALANCHE RATED, LOW CONDUCTION LOSS |
TO-263AB |
33 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
695 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRAFAST, HIGH SPEED |
TO-247AE |
e0 |
153 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
85 ns |
205 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
17 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N2 |
HIGH SPEED SWITCHING |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
SQUARE |
1 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N |
|||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 W |
27 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
450 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
300 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
28.4 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
319 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
-55 Cel |
30 V |
4 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
30 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
180 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
17.5 ns |
||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
60 W |
5.3 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
15 ns |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
333 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
32 ns |
-55 Cel |
20 V |
458 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
AVALANCHE RATED |
TO-220AB |
24 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
500 W |
64 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
80 ns |
165 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
25 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-264AA |
45 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
85 ns |
205 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
17 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
292 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
360 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
25.6 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
95 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
265 ns |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
33 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.9 V |
NO LEAD |
SQUARE |
1 |
332 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
SWITCHING |
1.95 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
EMITTER |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.75 V |
NO LEAD |
SQUARE |
1 |
424 ns |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
7.2 V |
UPPER |
S-XUUC-N2 |
468 ns |
AEC-Q101 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
223 W |
330 A |
UNSPECIFIED |
POWER CONTROL |
1.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
280 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
-55 Cel |
30 V |
5.5 V |
SINGLE |
R-XSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
63 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
85 ns |
205 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
17 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
212 W |
38 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
876 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH SPEED |
TO-264AA |
e0 |
214 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
e3 |
85 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
28 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
48 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
316 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
-55 Cel |
30 V |
4.3 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
62.5 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
5.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
100 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1500 V |
-55 Cel |
20 V |
170 ns |
4 V |
SINGLE |
R-PSFM-T3 |
25 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
30 W |
23 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
320 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
e3 |
55 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
365 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
46 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.