SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IGW50N65H5FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

IXGA30N120B3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

53 ns

IXYA20N120B4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

440 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

48 ns

NGTG25N120FL2WG

Onsemi

N-CHANNEL

SINGLE

NO

385 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

178 ns

SGD02N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 W

6.2 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

61 ns

375 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

TO-252AA

e3

260

40 ns

SGW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

SIGC54T60R3EX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

STGP20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

42.5 ns

STGW20NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

42.5 ns

STGW60H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

104 ns

SGF5N150UFTU

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

20 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

25 ns

PCGA200T65NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.9 V

NO LEAD

SQUARE

1

332 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

300 ns

AEC-Q101

HGT1S11N120CNS

Onsemi

N-CHANNEL

SINGLE

YES

298 W

43 A

PLASTIC/EPOXY

POWER CONTROL

16 ns

2.4 V

GULL WING

RECTANGULAR

1

400 ns

550 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSSO-G2

COLLECTOR

AVALANCHE RATED, LOW CONDUCTION LOSS

TO-263AB

33 ns

MGW12N120

Onsemi

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

153 ns

HGTP7N60A4

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

17 ns

PCFG60T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.95 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N2

HIGH SPEED SWITCHING

NOT SPECIFIED

NOT SPECIFIED

PCFG60T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N

NGTD17T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

PCFG40T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

NGTD14T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

NGTD13T120F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

TIG110BF

Onsemi

N-CHANNEL

SINGLE

NO

70 W

27 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

300 ns

FGPF4533

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

50 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

319 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

TO-220AB

e3

30 ns

HGTP3N60A4

Onsemi

N-CHANNEL

SINGLE

NO

70 W

17 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

2.7 V

THROUGH-HOLE

RECTANGULAR

1

100 ns

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

23 ns

-55 Cel

20 V

265 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

17.5 ns

HGTP1N120BN

Onsemi

N-CHANNEL

SINGLE

NO

60 W

5.3 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

2.9 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

333 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

32 ns

-55 Cel

20 V

458 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED

TO-220AB

24 ns

FGL40N120AN

Onsemi

N-CHANNEL

SINGLE

NO

500 W

64 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

165 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

25 V

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-264AA

45 ns

PCFG40T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.95 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NGTD17T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

HGTP7N60A4-F102

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

17 ns

FGPF4536TU

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

150 Cel

SILICON

360 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

25.6 ns

NGTD20T120F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

HGT1S12N60A4S9A

Onsemi

N-CHANNEL

SINGLE

YES

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

95 ns

180 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

33 ns

PCGA200T65NF8M1

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.9 V

NO LEAD

SQUARE

1

332 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

300 ns

NGTD23T120F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.2 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

NGTD28T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

NGTD14T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

PCFG75T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

1.95 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

EMITTER

NOT SPECIFIED

NOT SPECIFIED

NCG225L75NF8M1

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.75 V

NO LEAD

SQUARE

1

424 ns

2

UNCASED CHIP

175 Cel

SILICON

750 V

-40 Cel

20 V

7.2 V

UPPER

S-XUUC-N2

468 ns

AEC-Q101

FGA90N33ATTU

Onsemi

N-CHANNEL

SINGLE

NO

223 W

330 A

UNSPECIFIED

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

280 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

5.5 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

63 ns

HGT1S7N60A4S9A

Onsemi

N-CHANNEL

SINGLE

YES

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

85 ns

205 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

17 ns

MGY25N120

Onsemi

N-CHANNEL

SINGLE

NO

212 W

38 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

876 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-264AA

e0

214 ns

SGF80N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

85 ns

HGTP20N60A4

Onsemi

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

28 ns

FGPF70N33BTTU

Onsemi

N-CHANNEL

SINGLE

NO

48 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

316 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4.3 V

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

SGF5N150UF

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

5.5 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

150 Cel

SILICON

1500 V

-55 Cel

20 V

170 ns

4 V

SINGLE

R-PSFM-T3

25 ns

NGTD13T120F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SGF23N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

30 W

23 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

55 ns

FGPF50N33BT

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

46 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.