Onsemi - SGF5N150UFTU

Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.

Infineon's AUIRGB4062D1 is an N-CHANNEL IGBT with tr of 41ns and tf of 40ns. It boasts a max power dissipation of 246W, ideal for high-power applications like motor drives and inverters. With a VCE of 600V and IC of 59A, it ensures efficient performance even at elevated temperatures up to 175°C.

FS450R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, 1200V max voltage, and 600A max current. It has a toff of 810ns and ton of 400ns. Ideal for high-power applications requiring fast switching capabilities in industries like renewable energy and industrial motor drives.

IRG4BC30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 380ns, making it ideal for MOTOR CONTROL applications. With a max power dissipation of 42W and operating temperature up to 150°C, this transistor offers reliable performance in various industrial settings.

Infineon Technologies' FF1200R17KP4B2NOSA2 is a N-CHANNEL IGBT with 1700V VCE, 1700A IC, and 2380ns toff. Ideal for power control applications due to its separate configuration with built-in diode elements. Rectangular package style with flange mount and isolated case connection.

Infineon's IGP40N65H5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

IRG4PC40UDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 330ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 160W, suitable for high-power electronic systems.

Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.

IRG4BC20UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Gate-Emitter Voltage of 20V. It has a Nominal Turn Off Time of 320ns, making it suitable for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, ideal for high-power applications up to 60W at temperatures up to 150°C.

FZ1000R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 3300V. It has a nominal turn off time of 4700ns and a nominal turn on time of 1050ns. This IGBT is commonly used in applications requiring high voltage switching capabilities.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; JESD-609 Code: e3;

IKW50N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A, ideal for POWER CONTROL applications. It has a toff of 205ns, ton of 35ns, and can handle up to 650V. The transistor operates b/w -40°C to 175°C, making it suitable for high-power systems requiring fast switching speeds.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;

IKW50N65H5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 231ns and can handle up to 305W power dissipation.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Fall Time (tf): 40 ns;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Terminal Finish: MATTE TIN OVER NICKEL;

FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.

Littelfuse IXYH50N120C3D1 is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 625W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.

IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.