SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

HGTD3N60A4S

Onsemi

N-CHANNEL

SINGLE

YES

70 W

17 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

2.7 V

GULL WING

RECTANGULAR

1

100 ns

180 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

23 ns

-55 Cel

20 V

265 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252AA

17.5 ns

HGTD7N60C3S

Onsemi

N-CHANNEL

SINGLE

YES

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

275 ns

490 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

RC-IGBT

TO-252AA

20 ns

FGH50N3

Onsemi

N-CHANNEL

SINGLE

NO

463 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

HGT5A27N120BN

Onsemi

N-CHANNEL

SINGLE

NO

500 W

72 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

4.2 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

53 ns

-55 Cel

20 V

480 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED

TO-247

42 ns

FGPF4533TU

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

319 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

30 ns

NGTD20T120F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FGPF50N33BTTU

Onsemi

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

46 ns

HGT1S20N60C3S

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

52 ns

PCFG75T65LQF

Onsemi

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

1.5 V

NO LEAD

RECTANGULAR

1

1100 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

UPPER

R-XUUC-N3

120 ns

NGTD23T120F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.2 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

PCGA300T65DF8M1

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.55 V

NO LEAD

SQUARE

1

473 ns

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

223 ns

AEC-Q101

SGH80N60UF

Onsemi

N-CHANNEL

SINGLE

NO

195 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

85 ns

HGT1S11N120CNS9A

Onsemi

N-CHANNEL

SINGLE

YES

298 W

43 A

PLASTIC/EPOXY

POWER CONTROL

16 ns

2.4 V

GULL WING

RECTANGULAR

1

400 ns

550 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSSO-G2

COLLECTOR

AVALANCHE RATED, LOW CONDUCTION LOSS

TO-263AB

33 ns

FGH50T65SQD-F155

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

119.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

33 ns

HGTP12N60C39A

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

30 ns

PCGA160T65NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

308 ns

UNCASED CHIP

150 Cel

SILICON

650 V

-40 Cel

20 V

6.3 V

UPPER

R-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

288 ns

AEC-Q101

NGTD21T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

SGH40N60UF

Onsemi

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

254 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

67 ns

HGTD7N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

275 ns

490 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

RC-IGBT

TO-252AA

e3

30

260

20 ns

NGTD13T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2.2 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

HGTP12N60A4

Onsemi

N-CHANNEL

SINGLE

NO

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

95 ns

180 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

33 ns

PCGA300T65DF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.55 V

NO LEAD

SQUARE

1

638 ns

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.6 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

225 ns

AEC-Q101

FGA50N100BNTTU

Onsemi

N-CHANNEL

SINGLE

NO

156 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

100 ns

308 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

-55 Cel

25 V

7 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

102 ns

SGH40N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

254 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

67 ns

SGR6N60UF

Onsemi

N-CHANNEL

SINGLE

YES

30 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

GULL WING

RECTANGULAR

1

150 ns

202 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

280 ns

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

54 ns

TIG111BF

Onsemi

N-CHANNEL

SINGLE

NO

60 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

250 ns

HGTP11N120CN

Onsemi

N-CHANNEL

SINGLE

NO

298 W

43 A

PLASTIC/EPOXY

MOTOR CONTROL

16 ns

2.4 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

550 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

42 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED

TO-220AB

33 ns

FGH75N60SFTU

Onsemi

N-CHANNEL

SINGLE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

87 ns

NGTD21T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

FGPF50N30TTU

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

423 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

108 ns

NGTD30T120F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

FGL40N120ANTU

Onsemi

N-CHANNEL

SINGLE

NO

64 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-264AA

e3

45 ns

FGH75N60UF

Onsemi

N-CHANNEL

SINGLE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

188 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

101 ns

PCFG75T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

FGAF40N60UF

Onsemi

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

67 ns

SGF23N60UF

Onsemi

N-CHANNEL

SINGLE

NO

75 W

23 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

ISOLATED

55 ns

HGTP20N60C3

Onsemi

N-CHANNEL

SINGLE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

52 ns

NGTD13T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2.2 V

NO LEAD

SQUARE

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

HGTP7N60C3

Onsemi

N-CHANNEL

SINGLE

NO

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

275 ns

490 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-220AB

20 ns

FGB3040CS

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

6

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

12 V

2.2 V

MATTE TIN

SINGLE

R-PSSO-G6

1

Not Qualified

e3

30

260

2100 ns

PCGLA200T75NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.75 V

NO LEAD

SQUARE

1

528 ns

UNCASED CHIP

175 Cel

SILICON

750 V

-40 Cel

20 V

6.7 V

UNSPECIFIED

S-XXUC-N

NOT SPECIFIED

NOT SPECIFIED

488 ns

AEC-Q101

NGTD28T65F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

FGPF4536

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

150 Cel

SILICON

360 V

-55 Cel

30 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

25.6 ns

PCFG50T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

PCFG25T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.95 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

MGW20N120

Onsemi

N-CHANNEL

SINGLE

NO

174 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AE

e0

190 ns

FGPF4633

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

394 ns

3

FLANGE MOUNT

SILICON

330 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

40 ns

NGTD30T120F2SWK

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.