Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
100 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252AA |
17.5 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
60 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
275 ns |
490 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
675 ns |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
RC-IGBT |
TO-252AA |
20 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
463 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
162 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
300 V |
20 V |
5.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
500 W |
72 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
25 ns |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
360 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
53 ns |
-55 Cel |
20 V |
480 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
AVALANCHE RATED |
TO-247 |
42 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
319 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
365 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
46 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
164 W |
45 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
28 ns |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
210 ns |
388 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
60 ns |
-55 Cel |
20 V |
660 ns |
6.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
52 ns |
||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.5 V |
NO LEAD |
RECTANGULAR |
1 |
1100 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N3 |
120 ns |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.55 V |
NO LEAD |
SQUARE |
1 |
473 ns |
9 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N9 |
NOT SPECIFIED |
NOT SPECIFIED |
223 ns |
AEC-Q101 |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
195 W |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
310 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
85 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
298 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
16 ns |
2.4 V |
GULL WING |
RECTANGULAR |
1 |
400 ns |
550 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
680 ns |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
AVALANCHE RATED, LOW CONDUCTION LOSS |
TO-263AB |
33 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
268 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
119.5 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
RC-IGBT |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
33 ns |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
480 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
30 ns |
|||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.85 V |
NO LEAD |
RECTANGULAR |
1 |
308 ns |
UNCASED CHIP |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XXUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
288 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
254 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
67 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
60 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
275 ns |
490 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
675 ns |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
RC-IGBT |
TO-252AA |
e3 |
30 |
260 |
20 ns |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2.2 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
|||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
167 W |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
95 ns |
180 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
265 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
33 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.55 V |
NO LEAD |
SQUARE |
1 |
638 ns |
9 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.6 V |
UPPER |
S-XUUC-N9 |
NOT SPECIFIED |
NOT SPECIFIED |
225 ns |
AEC-Q101 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
156 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
308 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1000 V |
-55 Cel |
25 V |
7 V |
SINGLE |
R-PSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
102 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
254 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
e3 |
67 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
30 W |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.6 V |
GULL WING |
RECTANGULAR |
1 |
150 ns |
202 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
280 ns |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
54 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
60 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
250 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
298 W |
43 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
16 ns |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
550 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
42 ns |
-55 Cel |
20 V |
680 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
AVALANCHE RATED |
TO-220AB |
33 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
159 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
87 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
423 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
300 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
108 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
64 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-264AA |
e3 |
45 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
188 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
101 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
SQUARE |
1 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
67 ns |
||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
75 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
55 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
164 W |
45 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
28 ns |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
388 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
60 ns |
-55 Cel |
20 V |
660 ns |
6.3 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
52 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2.2 V |
NO LEAD |
SQUARE |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
S-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
60 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
275 ns |
490 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
675 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
RC-IGBT |
TO-220AB |
20 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7300 ns |
6 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
12 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
2100 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.75 V |
NO LEAD |
SQUARE |
1 |
528 ns |
UNCASED CHIP |
175 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.7 V |
UNSPECIFIED |
S-XXUC-N |
NOT SPECIFIED |
NOT SPECIFIED |
488 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
28.4 W |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
292 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
360 V |
-55 Cel |
30 V |
4 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
25.6 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
174 W |
28 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
710 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-247AE |
e0 |
190 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
394 ns |
3 |
FLANGE MOUNT |
SILICON |
330 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
40 ns |
|||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
2.4 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.