SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGC4069B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

R-XUUC-N2

IGC39T65T8M

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.82 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

OM6502ST

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

10 A

METAL

POWER CONTROL

1000 ns

PIN/PEG

SQUARE

1

1500 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-257AA

e0

150 ns

IGC27T120T6LX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG6S320U

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

270 ns

2

SMALL OUTLINE

SILICON

330 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

75 ns

IGC11T120T8LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGC10B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IGB03N120H2XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IGP20N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

170 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

31 ns

IGC11T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGAC50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IGC50T120T8RQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC11T120T8LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC39T65T8MX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.82 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IGP30N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

187 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

40 ns

IRGC35B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGC50B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRGC4059B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

R-XUUC-N2

IRGS6B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

13 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

258 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

45 ns

IRGMC40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IGC11T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGB20N65S5

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

188 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

28 ns

IGB03N120H2

Infineon Technologies

N-CHANNEL

SINGLE

YES

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

16.1 ns

IRGC75B120UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC100B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRGS4B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

40 ns

IGC142T120T6RLX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC100T65T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.23 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IGC28T65T8M

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.82 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IRGS4065TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

560 ns

2

SMALL OUTLINE

SILICON

300 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

58 ns

IGC54T65T8RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1.82 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IGB20N65S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

188 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

28 ns

IGC13T120T8LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC27T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

OM6517CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

6.5 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

OM6516SCV

Infineon Technologies

N-CHANNEL

SINGLE

NO

25 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-258AA

e0

250 ns

GB50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

IGC36T120T6LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6506CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

20 A

METAL

POWER CONTROL

200 ns

PIN/PEG

SQUARE

1

2000 ns

3000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

IRGMC50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IGC114T170S8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

Not Qualified

IGC41T120T8Q

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC99T120T8RQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IRGC48B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGP20N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

42 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IRGS15B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

52 ns

IRGC4060B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

R-XUUC-N2

IGC50T120T8RLX7SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.