Infineon Technologies - IRGC48B120KB

Infineon Technologies' FF450R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring 1200V max collector-emitter voltage and 580A max collector current. Ideal for high-power applications requiring fast switching speeds, such as industrial motor drives and renewable energy systems.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; JESD-609 Code: e3;

Fujitsu's 2MBI200VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. Ideal for MOTOR CONTROL applications, it has a max. Collector-Emitter Voltage of 600V and max. Collector Current of 200A. Features include Nominal Turn Off Time of 600ns and Nominal Turn On Time of 650ns in a RECTANGULAR package style with FLANGE MOUNT.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 24 A; Nominal Turn Off Time (toff): 143 ns;

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 283 A; Maximum Collector-Emitter Voltage: 600 V;

IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.

Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.

Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.

FGH40N60SMDF-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.5V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 123ns, tf of 20ns, and can handle up to 349W power dissipation. Operating b/w -55°C to 175°C, it features a max VCE of 600V and gate-emitter voltage of 20V.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 40 A; Case Connection: ISOLATED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V;

IRGB4061DPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a power dissipation of 206W and is ideal for power control applications due to its single configuration with built-in diode. With fast rise and fall times of 35ns, it offers efficient switching performance in various industrial settings.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 24.8 ns;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;

FGAF40N60UFTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 67ns, toff: 190ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;

Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.